• DocumentCode
    978141
  • Title

    1.5 ¿m GaInAsP/InP distributed Bragg reflector lasers with built-in optical waveguide

  • Author

    Mikami, O. ; Saitoh, T. ; Nakagome, H.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    11
  • fYear
    1982
  • Firstpage
    458
  • Lastpage
    460
  • Abstract
    Room-temperature operation of distributed Bragg reflector (DBR) lasers emitting at 1.5 ¿m is reported. The diode was fabricated by conventional techniques and has a simple configuration with a built-in waveguide grown by single-step liquid-phase epitaxy. Single-longitudinal-mode oscillation at 1.504¿1.505 ¿m was obtained at temperatures between ¿10°C and 5°C with 310¿360 mA threshold current.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; 1.5 microns wavelength; GaInAsP/InP distributed Bragg reflector lasers; built-in optical waveguide; room temperature operation; semiconductor laser; single longitudinal mode oscillation; single-step liquid-phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820312
  • Filename
    4246447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978141