DocumentCode :
978145
Title :
Modulation speed and leakage current in 650 nm resonant-cavity light emitting diodes
Author :
Hild, K. ; Sale, T.E. ; Sweeney, S.J. ; Hirotani, M. ; Mizuno, Y. ; Kato, T.
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Volume :
151
Issue :
2
fYear :
2004
fDate :
4/26/2004 12:00:00 AM
Firstpage :
94
Lastpage :
97
Abstract :
The authors have investigated red-emitting (650 nm) resonant-cavity light emitting diodes for use with polymer optical fibres. The small signal modulation response is characterised by a single order roll-off. The -3 dB bandwidth is found to be determined solely by the differential carrier lifetime, τ, in the active region and hence dependent on current density, J, alone with no intrinsic size effects. The τ(J) relation allows the calculation of the active region carrier density and hence the recombination parameters (mono- and bimolecular) in the regime where the leakage is small. It is shown that the leakage is insignificant for currents below 200 A/cm2 at 20°C. Above 40°C the leakage rises rapidly with temperature, and is evident from a dramatic fall in τ and an accelerated rise in the current required to maintain constant light output.
Keywords :
carrier density; carrier lifetime; leakage currents; light emitting diodes; optical fibre communication; optical modulation; -3 dB bandwidth; 20 degC; 650 nm; 650 nm resonant-cavity light emitting diodes; active region carrier density; current density; differential carrier lifetime; leakage current; modulation speed; polymer optical fibres; recombination parameters; red-emitting resonant-cavity light emitting diodes; signal modulation response;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20040289
Filename :
1295758
Link To Document :
بازگشت