Title :
Surface-emitting GaInAsP/InP injection laser with short cavity length
Author :
Motegi, Yotaro ; Soda, H. ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
We have succeeded in making a surface-emitting GaInAsP/InP injection laser with short cavity length (¿ 10 ¿m) which operates at 1.22 ¿m of wavelength with threshold current of 160 mA (33 kA/cm2) at 77 K. No side-emitting mode was observed as a result of preparing long absorbing regions and a small dot electrode (25 ¿m ¿). One of the longitudinal modes, with a spacing of 170 Å, dominated above threshold and the far-field radiation angle was sharp (2¿¿ = 10°).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; semiconductor junction lasers; 1.22 microns wavelength; GaInAsP-InP laser; far-field radiation angle; longitudinal modes; semiconductor laser; short cavity length; surface emitting injection laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820314
