Title :
Performance comparison analysis of GeSi and Si bipolar transistors
Author :
Neugroschel, A. ; Ford, John M. ; Steele, Jacob ; Tang, Ronglin ; Stein, Chris ; Welch, P. ; Watanabe, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
fDate :
6/20/1996 12:00:00 AM
Abstract :
Performance improvements of Si/GexSi1-x/Si heterojunction bipolar transistors with linearly graded Ge profile in the epitaxial base layer are compared with Si transistors without Ge by using a combined DC and low-frequency (1 kHz) small-signal AC measurements. Quantitative analysis of the minority-carrier transport parameters in the GeSi base layer, and of the current gain and recombination current components, for both GeSi and Si transistors are reported for the first time. The two fold improvement of the base transit time in GeSi transistors is due to the built-in electric field from Ge grading, rather than to improved diffusivity
Keywords :
Ge-Si alloys; bipolar transistors; doping profiles; elemental semiconductors; heterojunction bipolar transistors; minority carriers; semiconductor materials; silicon; DC measurements; Si; Si bipolar transistors; Si-GeSi-Si; Si/GexSi1-x/Si HBT; current gain; electric field; epitaxial base layer; heterojunction bipolar transistors; linearly graded Ge profile; minority-carrier transport parameters; performance comparison analysis; recombination current components; small-signal AC measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960781
