Performance comparison analysis of GeSi and Si bipolar transistors

Author

Neugroschel, A. ; Ford, John M. ; Steele, Jacob ; Tang, Ronglin ; Stein, Chris ; Welch, P. ; Watanabe, J.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL

Volume

32

Issue

13

fYear

1996

fDate

6/20/1996 12:00:00 AM

Firstpage

1239

Lastpage

1241

Abstract

Performance improvements of Si/Ge_xSi_1-x/Si heterojunction bipolar transistors with linearly graded Ge profile in the epitaxial base layer are compared with Si transistors without Ge by using a combined DC and low-frequency (1 kHz) small-signal AC measurements. Quantitative analysis of the minority-carrier transport parameters in the GeSi base layer, and of the current gain and recombination current components, for both GeSi and Si transistors are reported for the first time. The two fold improvement of the base transit time in GeSi transistors is due to the built-in electric field from Ge grading, rather than to improved diffusivity

Keywords

Ge-Si alloys; bipolar transistors; doping profiles; elemental semiconductors; heterojunction bipolar transistors; minority carriers; semiconductor materials; silicon; DC measurements; Si; Si bipolar transistors; Si-GeSi-Si; Si/Ge_xSi_1-x/Si HBT; current gain; electric field; epitaxial base layer; heterojunction bipolar transistors; linearly graded Ge profile; minority-carrier transport parameters; performance comparison analysis; recombination current components; small-signal AC measurements;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960781

Filename

503027