Title :
Prediction of TDDB characteristics under constant current stresses [gate oxides]
Author :
Cheung, T.-S. ; Choi, W.-Y. ; Lee, S.-D. ; Yoon, J.-S. ; Kim, B.-R.
Author_Institution :
Dept. of Electron. Eng., Yonsei Univ., Seoul, South Korea
fDate :
6/20/1996 12:00:00 AM
Abstract :
A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas
Keywords :
MIS structures; current density; dielectric thin films; electric breakdown; statistical analysis; TDDB characteristics; breakdown model; constant current stresses; effective oxide thickness; gate oxides; oxide breakdown; oxide lifetime; stress current density; time-dependent dielectric breakdown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960798
