Title :
Simple model for threshold voltage of a nonuniformly doped short-channel MOS transistor
Author_Institution :
Institute of Microelectronics, Sofia, Bulgaria
Abstract :
In this letter a simple geometric model for evaluating the threshold voltage of an ion-implanted short-channel MOS transistor, taking into account the form of the depletion regions around the source and drain p-n junctions, is presented. The model displays good agreement between the theoretical and experimental results and can be employed for sensitivity evaluation and optimisation of the threshold voltage.
Keywords :
insulated gate field effect transistors; ion implantation; semiconductor device models; MOSFET; MOST; depletion regions; drain p-n junctions; geometric model; ion-implanted short-channel MOS transistor; nonuniformly doped; optimisation; semiconductor device model; sensitivity evaluation; source p-n junction; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820328
