DocumentCode
978327
Title
French team demonstrates terahertz transistor
Author
Hellemans, Alexander
Volume
41
Issue
5
fYear
2004
fDate
5/1/2004 12:00:00 AM
Firstpage
16
Abstract
The creation of a nanotransistor that generates a terahertz signal by means of plasma waves was reported by researchers in France in the 29 March issue of Applied Physics Letters. Such devices could fill a gap between 0.3 and 3 terahertz, for which no compact solid-state sources are available.
Keywords
nanotechnology; submillimetre wave generation; submillimetre wave transistors; 0.3 to 3 THz; Montpellier transistor; electron beam lithography; nanotransistor; nonionizing radiation; plasma waves; terahertz emission; terahertz gap; terahertz signal; terahertz transistor; Economic indicators; Electron mobility; Frequency; Nanoscale devices; Nanotechnology; Plasma sources; Plasma waves; Spectroscopy; Threshold voltage; X-rays;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.2004.1296006
Filename
1296006
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