Title :
Low-threshold oxide stripe GaAs/GaAlAs lasers grown by MOCVD
Author :
Hong, Choong ; Kasemset, D. ; Patel, N.B. ; Kim, May E. ; Dapkus, P.D.
Author_Institution :
Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
MOCVD-grown insulator defined stripe GaAs/GaAlAs lasers with stripe widths of 6, 10, 20 and 150 ¿m have been characterised. Uniform CW threshold currents as low as 45 mA, differential quantum efficiencies as high as 74%, and kink-free power levels as high as 20 mW/facet have been obtained in 160 ¿m long, 6 ¿m stripe lasers. The internal differential quantum efficiency measured from our 6 ¿m stripe lasers approaches one. Single longitudinal mode operation of these lasers has also been observed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; CW threshold currents; III-V semiconductor; VPE; differential quantum efficiencies; metal-organic CVD; oxide stripe GaAs-GaAlAs lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820338
