DocumentCode
978416
Title
Low-threshold oxide stripe GaAs/GaAlAs lasers grown by MOCVD
Author
Hong, Choong ; Kasemset, D. ; Patel, N.B. ; Kim, May E. ; Dapkus, P.D.
Author_Institution
Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
Volume
18
Issue
12
fYear
1982
Firstpage
497
Lastpage
499
Abstract
MOCVD-grown insulator defined stripe GaAs/GaAlAs lasers with stripe widths of 6, 10, 20 and 150 ¿m have been characterised. Uniform CW threshold currents as low as 45 mA, differential quantum efficiencies as high as 74%, and kink-free power levels as high as 20 mW/facet have been obtained in 160 ¿m long, 6 ¿m stripe lasers. The internal differential quantum efficiency measured from our 6 ¿m stripe lasers approaches one. Single longitudinal mode operation of these lasers has also been observed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; CW threshold currents; III-V semiconductor; VPE; differential quantum efficiencies; metal-organic CVD; oxide stripe GaAs-GaAlAs lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820338
Filename
4246474
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