Title :
Output power saturation of BH laser under high current operation
Author :
Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Suzuki, Yuya ; Nagai, Hiroto
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Output power saturation of BH lasers under high current operation is analysed and it is concluded that such saturation is due to increase of leakage current through the burying layers. The mechanism of such leakage can be explained by a turn-on model of the bipolar transistor around the active region.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP BH lasers; bipolar transistor; high current operation; leakage current; output power saturation; turn-on model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820341
