• DocumentCode
    978456
  • Title

    Output power saturation of BH laser under high current operation

  • Author

    Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Suzuki, Yuya ; Nagai, Hiroto

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    501
  • Lastpage
    502
  • Abstract
    Output power saturation of BH lasers under high current operation is analysed and it is concluded that such saturation is due to increase of leakage current through the burying layers. The mechanism of such leakage can be explained by a turn-on model of the bipolar transistor around the active region.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP BH lasers; bipolar transistor; high current operation; leakage current; output power saturation; turn-on model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820341
  • Filename
    4246477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978456