Title :
Approximate analytic current-voltage calculations for MODFETs
Author :
Khondker, A.N. ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
Two analytic techniques to calculate the current-voltage (I -V) characteristics of modulation-doped field-effect transistors (MODFETs) are presented. The present methods are based on the model of C.S. Chang and H.R. Fetterman (1987). However, the velocity-field dependence is approximated by a different empirical relation than was used to model Si MOSFETs. The advantage of using this empirical relation is that it gives analytic expressions for the I -V characteristics and the microwave small signal parameters. Moreover, the theoretical results are in good agreement with the experimental results
Keywords :
high electron mobility transistors; semiconductor device models; solid-state microwave devices; I-V characteristics; MODFETs; Si; current-voltage calculations; empirical relation; microwave small signal parameters; velocity-field dependence; Annealing; Crystallization; Electron mobility; HEMTs; Implants; MODFETs; Semiconductor films; Silicon; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
