Title :
Speed power in planar two-dimensional electron gas FET DCFL circuit: a theoretical approach
Author :
Delagebeaudeuf, D. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Central Research Laboratories, Orsay, France
Abstract :
A comparative study is made on the speed power of the two-dimensional electron gas FET (TEGFET) and the conventional GaAs FET. It is shown that the TEGFET is three times faster than the GaAs FET. Propagation delay times of 10 and 6 ps are predicted at 300 and 77 K, respectively, for a gate length of about 1 ¿m. Effects of electron velocity and mobility are given.
Keywords :
field effect integrated circuits; integrated circuit technology; integrated logic circuits; GaAs FET; electron mobility; electron velocity; gate length; propagation delay time; speed power; two-dimensional electron gas FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820347
