• DocumentCode
    978511
  • Title

    Speed power in planar two-dimensional electron gas FET DCFL circuit: a theoretical approach

  • Author

    Delagebeaudeuf, D. ; Linh, Nuyen T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratories, Orsay, France
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    510
  • Lastpage
    512
  • Abstract
    A comparative study is made on the speed power of the two-dimensional electron gas FET (TEGFET) and the conventional GaAs FET. It is shown that the TEGFET is three times faster than the GaAs FET. Propagation delay times of 10 and 6 ps are predicted at 300 and 77 K, respectively, for a gate length of about 1 ¿m. Effects of electron velocity and mobility are given.
  • Keywords
    field effect integrated circuits; integrated circuit technology; integrated logic circuits; GaAs FET; electron mobility; electron velocity; gate length; propagation delay time; speed power; two-dimensional electron gas FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820347
  • Filename
    4246483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978511