Title :
High-speed low-power DCFL using planar two-dimensional electron gas FET technology
Author :
Tung, Pham N. ; Delescluse, P. ; Delagebeaudeuf, D. ; Laviron, M. ; Chaplart, J. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
Planar two-dimensional electron gas FETs (TEGFETs) have been shown to have ultra-high speed and low power in DCFL circuits operating at room temperature: 18.4 ps at 900 ¿W and 32.5 ps at 62 ¿W. The latter result and the simplicity of the process involved are compatible with VLSI requirements.
Keywords :
field effect integrated circuits; integrated circuit technology; integrated logic circuits; large scale integration; DCFL circuits; E-JFET logic; LPFL circuits; SDFL logic; VLSI; integrated logic circuits; planar two-dimensional electron gas FET technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820351
