• DocumentCode
    978615
  • Title

    Pressure dependence of threshold current in GaxIn1¿xAsyP1¿y lasers

  • Author

    Patel, Dinesh ; Adams, A.R. ; Greene, P.D. ; Henshall, G.D.

  • Author_Institution
    University of Surrey, Physics Department, Guildford, UK
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    527
  • Lastpage
    528
  • Abstract
    The threshold current in 20 ¿m stripe GaxIn1¿xAsyP1¿y lasers operating at 1.3 ¿m wavelength decreases with increasing pressure, whereas the opposite effect occurs in lasers made of Ga1¿xAlxAs The magnitude of the change observed in quaternary lasers is consistent with the presence of intervalence band absorption or Auger recombination, but not with the other mechanisms considered.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; Auger recombination; III-V semiconductors; intervalence band absorption; quaternary lasers; stripe GaxIn1-xAsyP1-y lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820357
  • Filename
    4246493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978615