Title :
Pressure dependence of threshold current in GaxIn1¿xAsyP1¿y lasers
Author :
Patel, Dinesh ; Adams, A.R. ; Greene, P.D. ; Henshall, G.D.
Author_Institution :
University of Surrey, Physics Department, Guildford, UK
Abstract :
The threshold current in 20 ¿m stripe GaxIn1¿xAsyP1¿y lasers operating at 1.3 ¿m wavelength decreases with increasing pressure, whereas the opposite effect occurs in lasers made of Ga1¿xAlxAs The magnitude of the change observed in quaternary lasers is consistent with the presence of intervalence band absorption or Auger recombination, but not with the other mechanisms considered.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; Auger recombination; III-V semiconductors; intervalence band absorption; quaternary lasers; stripe GaxIn1-xAsyP1-y lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820357
