DocumentCode :
978657
Title :
Specific capacitance of Josephson tunnel junctions
Author :
Magerlein, J.H.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
17
Issue :
1
fYear :
1981
fDate :
1/1/1981 12:00:00 AM
Firstpage :
286
Lastpage :
289
Abstract :
The specific capacitance of several types of Josephson tunnel junctions has been measured by observing resonances in lightly-damped 2-junction interferometers. The capacitance was calculated using the resonance voltage, obtained by analyzing steps in the I-V characteristics, and the interferometer inductance, which was measured directly by the injection of a control current. Using this technique, the specific capacitance Cswas determined for tunnel junctions with Pb-In-Au alloy base electrodes and Pb-Bi counterelectrodes, as well as for junctions made on Nb films with Pb-In-Au counterelectrodes. In both cases, barriers were produced by rf plasma oxidation. Junctions with Josephson current densities j1between 200 and 5000 A/cm2were investigated. It was found that 1/Csdecreased with \\log j_{1} , and that at j1= 1000 A/cm2, Cswas 4.2 ±0.3 μF/cm2for the Pb-alloy junctions and 13.4 ±1 μF/cm2for the Nb junctions. These results are discussed in relation to available data on oxide thickness and dielectric constant.
Keywords :
Josephson devices; Capacitance measurement; Current measurement; Electrodes; Inductance measurement; Interferometers; Niobium alloys; Oxidation; Plasma density; Resonance; Voltage control;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1981.1060968
Filename :
1060968
Link To Document :
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