• DocumentCode
    978661
  • Title

    Be-implanted p-n junctions in Ga0.47In0.53As

  • Author

    Vescan, L. ; Selders, J. ; Kr¿¿utle, H. ; K¿¿tt, W. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    533
  • Lastpage
    534
  • Abstract
    The fabrication of Be-implanated Ga0.47In0.53As p-n diodes is described. After annealing the diodes exhibit saturation current densities of 1.5×10¿4 A/cm¿2 and an ideality factor of 1.6. The built-in voltage of ¿0.7 V demonstrates the feasibility of their application to electronic devices. SIMS and C/V measurements are consistent with theoretical data.
  • Keywords
    III-V semiconductors; beryllium; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor diodes; semiconductor doping; C/V measurements; Ga0.47In0.53As:Be p-n diodes; III-V semiconductor; SIMS measurements; annealing; ideality factor; saturation current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820361
  • Filename
    4246497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978661