• DocumentCode
    978670
  • Title

    Planar self-aligned ion-implanted InP MOSFET

  • Author

    Cameron, D.C. ; Irving, L.D. ; Whitehouse, C.R. ; Woodward, J.

  • Author_Institution
    Royal Signals & Radar Establishment, Great Malvern, UK
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    534
  • Lastpage
    536
  • Abstract
    n-channel enhancement-mode InP MOSFETs have been fabricated on Fe-doped semi-insulating material using a planar self-aligned Mo gate process with ion-implanted source and drain contact regions. These devices showed high mobilities up to 2400 cm2/Vs and excellent uniformity and stability.
  • Keywords
    III-V semiconductors; indium compounds; insulated gate field effect transistors; ion implantation; Fe-doped semi-insulating material; III-V semiconductor; Mo gate process; planar self-aligned ion-implanted InP MOSFET; stability; uniformity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820362
  • Filename
    4246498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978670