• DocumentCode
    978703
  • Title

    An extension of the reciprocity theorem to include high-level injection conditions

  • Author

    Krieger, G. ; Kwark, Y.H. ; Swanson, R.M.

  • Author_Institution
    VLSI Technol. Inc., San Jose, CA, USA
  • Volume
    37
  • Issue
    1
  • fYear
    1990
  • fDate
    1/1/1990 12:00:00 AM
  • Firstpage
    319
  • Lastpage
    321
  • Abstract
    The general proof of the Ebers-Moll reciprocity theorem is extended to include high-level injection conditions in bipolar base regions. The theorem, originally derived for the low-level case, is shown to be valid in the high-level limit, as long as the emitter injection efficiency is sufficiently high in both reciprocal configurations
  • Keywords
    bipolar transistors; semiconductor device models; Ebers-Moll reciprocity theorem; bipolar base regions; emitter injection efficiency; high-level injection conditions; reciprocal configurations; Calibration; Capacitance; Data mining; Electron devices; Equations; Geometry; P-n junctions; Photonic band gap; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43838
  • Filename
    43838