Title :
Novel triple-layer resist system
Author_Institution :
Matsushita Electronics Corporation, Semiconductor R&D Center, Nagaokakyo, Japan
Abstract :
A triple-layer resist system fabricated by a spin-coating process is described. Spin-on SiO2 film is found to be a desirable intermediate layer for this system. Submicron resolution with essentially vertical walls in the thick organic layer is achieved.
Keywords :
photoresists; semiconductor technology; SiO2 film; spin-coating process; submicron resolution; triple-layer resist system; vertical walls;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820368
