Title :
Improvement of on-resistance of MOS-gated devices
Author :
Baudelot, E. ; Chante, J.P. ; Urgell, J.J.
Author_Institution :
Ecole Centrale de Lyon, Laboratoire d´Electronique Automatique et Mesures Electriques, ERA CNRS 661, Ecully, France
Abstract :
The drain-current/drain-voltage characteristics of a MOS-gated four-layered device are compared in different circuit configurations. A significant improvement of the on-resistance with MOS-gate control is observed under working conditions different from those already used.
Keywords :
thyristors; MOS-gated devices; SCRs; drain-current/drain-voltage characteristics; on-resistance; working conditions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820370
