Title :
Lateral grating array high power CW visible semiconductor laser
Author :
Scifres, D.R. ; Burnham, R.D. ; Streifer, W.
Author_Institution :
Xerox Palo Alto Research Centers, Palo Alto, USA
Abstract :
A periodic, grating-like array of substrate grooves oriented parallel to the longitudinal axis of the laser provides a small periodic lateral thickness modulation of the active region of an MO-CVD-grown Ga1¿xAlxAs laser producing phase-locked operation at 7680 Å. CW output powers as high as 138 mW/facet have been obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; CW output powers; Ga1-xAlxAs laser; III-V semiconductors; active region; grating-like array; periodic lateral thickness modulation; phase-locked operation; substrate grooves;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820372
