Title :
OM-VPE growth of Mg-doped GaAs
Author :
Lewis, C.R. ; Dietze, W.T. ; Ludowise, M.J.
Author_Institution :
Varian Associates, Inc., Corporate Solid State Laboratory, Palo Alto, USA
Abstract :
The epitaxial growth of Mg-doped GaAs by the organometallic vapour phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.
Keywords :
III-V semiconductors; gallium arsenide; magnesium; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs:Mg; III-V semiconductors; input fluxes; organometallic vapour phase epitaxial process; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820385
