• DocumentCode
    978896
  • Title

    OM-VPE growth of Mg-doped GaAs

  • Author

    Lewis, C.R. ; Dietze, W.T. ; Ludowise, M.J.

  • Author_Institution
    Varian Associates, Inc., Corporate Solid State Laboratory, Palo Alto, USA
  • Volume
    18
  • Issue
    13
  • fYear
    1982
  • Firstpage
    569
  • Lastpage
    570
  • Abstract
    The epitaxial growth of Mg-doped GaAs by the organometallic vapour phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.
  • Keywords
    III-V semiconductors; gallium arsenide; magnesium; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs:Mg; III-V semiconductors; input fluxes; organometallic vapour phase epitaxial process; semiconductor growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820385
  • Filename
    4246522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978896