Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

Author

Van de Casteele, J. ; Vilcot, J.P. ; Gouy, J.P. ; Mollot, F. ; Decoster, D.

Author_Institution

Inst. d´Electron. et de Microelectron. du Nord, CNRS, Villeneuve d´Ascq

Volume

32

Issue

11

fYear

1996

fDate

5/23/1996 12:00:00 AM

Firstpage

1030

Lastpage

1032

Abstract

Gain nonlinearities at low optical power of an edge coupled GaInAs/InP heterojunction bipolar phototransistor are used to mix the optical demodulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated, since the other one is RF or microwave modulated. Experiments carried out for 2 GHz and 2 kHz, respectively, show the mixing of the two demodulated electrical signals in the phototransistor

Keywords

III-V semiconductors; demodulation; electro-optical modulation; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser beams; multiwave mixing; phototransistors; 2 GHz; 2 kHz; GaInAs-InP; RF modulated; demodulated electrical signals; edge coupled GaInAs/InP heterojunction bipolar phototransistor; edge-coupled GaInAs/InP heterojunction phototransistor; electro-optical mixing; gain nonlinearities; laser beams; low frequency range modulated; low optical power; microwave modulated; optical demodulation product mixing;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960636

Filename

503100