Title :
Erratum: Variation of minority carrier lifetime with level of injection in p-n-junction devices
Author :
Agarwal, Sheetal K. ; Jain, S.C. ; Harsh, P.S.
Keywords :
carrier lifetime; elemental semiconductors; germanium; minority carriers; p-n homojunctions; semiconductor diodes; silicon; Ge diode; Si diode; forward current-induced voltage decay methods; injection level; minority carrier lifetime; p-n-junction devices; reverse recovery; semiconductor diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820398
