We have investigated dimensional effects, i.e., variations in thickness, width, grain size, and separation between grains, on the current and field properties of NbN films. The films, all of which had T
c\´s of ∼ 16K were prepared by reactive sputtering, Self-field current densities measured at 4.2K ranged from

to > 10
7Amps/cm
2. Measured upper critical fields at 4.2K varied from < 100 kG to > 220 kG. Extrapolated H
c2\´s of over 500 kG were calculated from data taken near T
c. All of these results are correlated with transmission electron microscopy studies. The very highest upper critical fields are attributed to an H
c3arising from a column-void microstructure. In general, we conclude that dimensional effects are a dominant factor in achieving the very high current and field values observed in these films.