Title :
Erratum: High-frequency intensity noise behaviour during accelerated life tests of narrow-stripe proton-isolated DH AlGaAs lasers for optical communications
Author :
Biesterbos, J.W.M. ; Salemink, H.W.M.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; life testing; optical communication equipment; semiconductor device testing; semiconductor junction lasers; 0.1 to 1.6 GHz; accelerated life tests; facet-coated lasers; high frequency intensity noise behaviour; narrow stripe laser; optical communications; output fluctuation spectra; proton-isolated DH AlGaAs lasers; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820399
