DocumentCode
979021
Title
Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer
Author
Fujihara, Akihiro ; Onda, Kohei ; Nakayama, Taiki ; Miyamoto, Hideaki ; Ando, Y. ; Wakejima, A. ; Mizuki, E. ; Kuzuhara, Masaaki
Author_Institution
Kansai Electron. Res. Labs., NEC Corp., Shiga
Volume
32
Issue
11
fYear
1996
fDate
5/23/1996 12:00:00 AM
Firstpage
1039
Lastpage
1041
Abstract
A novel InAlAs/InGaAs heterojunction FET (HJFET), with an AlAs/InAs superlattice inserted between an InAlAs Schottky layer and an InAlAs donor layer, is proposed. The developed device exhibited initial DC characteristics identical to those of the conventional lattice-matched HJFET and improved thermal stability owing to the inserted superlattice layer acting as a barrier against impurity diffusion
Keywords
III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor superlattices; thermal stability; AlAs-InAs; AlAs/InAs superlattice insertion layer; DC characteristics; HJFET; InAlAs-InGaAs; InAlAs/InGaAs heterojunction FET; SPRINT; Schottky layer; donor layer; impurity diffusion barrier; thermal stability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960645
Filename
503106
Link To Document