Title :
Light emitting real-space transfer devices fabricated with strained GaAs/In0.2Ga0.8As/AlGaAs heterostructures
Author :
Lai, J.-T. ; Yeh, Yung-Hui ; Lee, Jonathan Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
fDate :
5/23/1996 12:00:00 AM
Abstract :
Light emitting devices based on real-space electron transfer are implemented with strained GaAs/InGaAs/AlGaAs heterostructures on GaAs substrates. Both GaAs channel and In0.2Ga0.8As channel devices are fabricated. The device energy band diagrams are simulated by using the MEDICI program. The optical measurement shows that the photocurrent on/off ratio of InGaAs channel devices is better than that of GaAs channel devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting devices; semiconductor heterojunctions; GaAs channel devices; GaAs substrates; GaAs-In0.2Ga0.8As-AlGaAs; InGaAs channel devices; MEDICI program; energy band diagrams; fabrication; light emitting devices; optical measurement; photocurrent on/off ratio; real-space transfer devices; simulation; strained GaAs/InGaAs/AlGaAs heterostructures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960664
