Title :
Monolithic 2¿20 GHz GaAs travelling-wave amplifier
Author :
Ayasli, Y. ; Reynolds, L.D. ; Vorhaus, J.L. ; Hanes, L.
Author_Institution :
Raytheon Research Division, Lexington, USA
Abstract :
A two-stage monolithic GaAs travelling-wave amplifier operating in the 2¿20 GHz frequency range with 12 dB flat gain is reported.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; 12 dB flat gain; 2 to 20 GHz frequency range; MESFET; field effect integrated circuit; two-stage monolithic GaAs travelling-wave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820409
