• DocumentCode
    979159
  • Title

    GaxIn1¿xAsyP1¿y/Gax¿,In1¿x¿,Asy¿,P1¿y¿, DH visible LED grown on (100) GaAs by LPE in the range of 670¿680 nm

  • Author

    Kawanishi, H. ; Hiraoka, Masatoshi

  • Author_Institution
    Kogakuin University, Department of Electronic Engineering, Tokyo, Japan
  • Volume
    18
  • Issue
    14
  • fYear
    1982
  • Firstpage
    602
  • Lastpage
    603
  • Abstract
    GaxIn1¿xAsyP1¿y/Gax¿,In1¿x¿,Asy¿,P1¿y¿ visible light emission diodes (LED) are reported. The double heterostructures were grown on (100) GaAs substrates by a liquid phase epitaxial (LPE) growth technique from a source melt rich in phosphorus. The wavelength of emitted light was 670¿680 nm at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; (100) GaAs substrates; 670; GaxIn1-xAsyP1-y DH visible LED; LPE; double heterostructures; semiconductor; to 680 nm wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820413
  • Filename
    4246551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979159