TLM diakoptics for coupled-mode analysis of GaAs MESFET distributed amplifier

Author

Han, S. Y C ; Yung, E.K.N.

Author_Institution

Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong

Volume

143

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

261

Lastpage

264

Abstract

A new model of the application of diakoptics in the transmission-line-matrix (TLM) method for the coupled-mode analysis of GaAs MESFET distributed amplifiers is proposed. The model takes into account the major coupling effect caused by C_dg and g_m of the active devices. Techniques are developed by representing the whole system as two coupled lossy transmission lines. The numerical effort required can be reduced by representing the response of the resultant coupled system as that of superposition of two independent modes. The scattering matrix of the system obtained in the time domain leads to a process of discrete time domain convolutions based on the TLM numerical procedure. The results are compared with other analytical and computed results and show good agreement

Keywords

III-V semiconductors; MESFET circuits; S-matrix theory; coupled mode analysis; distributed amplifiers; gallium arsenide; microwave amplifiers; network topology; transmission line matrix methods; GaAs; GaAs MESFET distributed amplifier; TLM diakoptics; active device; coupled lossy transmission lines; coupled-mode analysis; discrete time domain convolution; internal feedback capacitance; numerical method; scattering matrix; transconductance; transmission-line-matrix;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings

Publisher

iet

ISSN

1350-2417

Type

jour

DOI

10.1049/ip-map:19960427

Filename

503120