• DocumentCode
    979213
  • Title

    Growth effects of In0.53Ga0.47As on InP structured substrates

  • Author

    Chand, Naresh ; Syrbu, A.V. ; Houston, P.A.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    18
  • Issue
    14
  • fYear
    1982
  • Firstpage
    613
  • Lastpage
    614
  • Abstract
    LPE growth studies of In0.53Ga0.47As on structured InP substrates orientated in the (100) and (111)B planes have been carried out. A reluctance to grow in the [111]A and [111]B directions has been found while nucleation readily occurs on (100) faces and rounded surfaces. Selective growth in etched channels was possible without masking.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; substrates; In0.53Ga0.47As; InP structured substrates; LPE growth; etched channels; nucleation; selective growth; semiconductor growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820419
  • Filename
    4246557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979213