DocumentCode
979329
Title
Accurate boundary integral calculation in semiconductor device simulation
Author
Gusmeroli, Riccardo ; Spinelli, Alessandro S.
Author_Institution
Dipt. di Elettronica e Informazione, Politecnico di Milano
Volume
53
Issue
7
fYear
2006
fDate
7/1/2006 12:00:00 AM
Firstpage
1730
Lastpage
1733
Abstract
An accurate method for the evaluation of boundary integrals in semiconductor device modeling is presented. The method is compared against more common algorithms and can achieve both high accuracy and low computational time. The range of applications is extremely wide, including contact currents and charges, carrier quantum probability fluxes, and heat fluxes
Keywords
boundary integral equations; semiconductor device models; boundary integral calculation; carrier quantum probability fluxes; contact charges; contact currents; heat fluxes; semiconductor device model; semiconductor device simulation; Boundary conditions; Computational modeling; Contacts; Electron devices; Integral equations; Partial differential equations; Piecewise linear approximation; Samarium; Semiconductor device modeling; Semiconductor devices; MOSFETs; partial differential equations (PDEs); semiconductor device modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.875806
Filename
1643508
Link To Document