DocumentCode :
979359
Title :
Measurement of low-noise column readout circuits for CMOS image sensors
Author :
Kawai, Nobuhiro ; Kawahito, Shoji
Author_Institution :
Graduate Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu
Volume :
53
Issue :
7
fYear :
2006
fDate :
7/1/2006 12:00:00 AM
Firstpage :
1737
Lastpage :
1739
Abstract :
This brief describes the measurement results of high-gain column readout circuits for CMOS image sensors. The measurement results show that the double-stage noise-canceling architecture has better noise performance than that of the single-stage architecture at a first-stage gain of greater than 6. The lowest input-referred noise is measured to be 49 muVrms at a gain of 24
Keywords :
CMOS image sensors; integrated circuit noise; readout electronics; 24 dB; 49 muV; CMOS image sensors; circuit noise; column readout circuits; double-stage noise-canceling architecture; input-referred noise; Active noise reduction; CMOS image sensors; Circuit noise; Gain measurement; Image sensors; Noise cancellation; Noise measurement; Noise reduction; Pulse amplifiers; Switches; CMOS image sensor; double-stage noise-canceling architecture; high-gain column amplifier; noise reduction;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.875813
Filename :
1643511
Link To Document :
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