Title :
Ga1¿xAlxAs material for high-sensitivity pressure sensors
Author :
Saxena, Alok Kumar
Author_Institution :
University of Roorkee, Department of Electronics & Communication Engineering, Roorkee, India
Abstract :
The resistivity of n-type Ga1¿xAlxAs alloys has been found to be very sensitive to both the purely hydrostatic and small nonhydrostatic pressures. For some alloy compositions, the resistivity variation with pressure is almost linear. For typical alloy composition x = 0.23, the coefficients are ~ 1.7 kbar¿1 and ~ ¿0.15 kbar¿1 for low (P ¿ 18 kbars) and high pressures (P > 18 kbars), respectively. For the same composition, the temperature coefficients of resistivity are ~ 4.3 × 10¿3 K¿1 and ~ 0.22 K¿1 for temperature intervals 300 > T > 125 K and T < 125 K, respectively.
Keywords :
III-V semiconductors; aluminium compounds; electric sensing devices; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; pressure transducers; high-sensitivity pressure sensors; n-type Ga1-xAlxAs alloys; resistivity; semiconductor; temperature coefficients of resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820439
