A radiation-hard AGC stabilized SOS crystal oscillator

Author

Redman-White, William ; Dunn, Roy ; Lucas, Rex ; Smithers, Peter

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

Volume

25

Issue

1

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

282

Lastpage

288

Abstract

A 12 MHz crystal oscillator/divider fabricated in silicon on sapphire (SOS) is presented. The chip incorporates a significant analog component, as an automatic gain control (AGC) loop is used to minimize the influence of changing transistor parameters due to radiation. The design tackles the problems associated with realizing analog circuitry in a floating substrate technology and the use of circuit techniques to achieve radiation hardness. A simple system-level modeling method is used to predict the oscillator start-up and AGC loop stability. The measured stability is around 0.1 p.p.m./V; circuits are still functional at more than 50 Mrad (Si) and show frequency deviations of typically 8 p.p.m. from nominal

Keywords

MOS integrated circuits; automatic gain control; crystal resonators; frequency dividers; frequency stability; linear integrated circuits; radiation hardening (electronics); radiofrequency oscillators; 12 MHz; 5×10⁷ rad; AGC stabilized; Colpitt´s circuit; RF type; SOS crystal oscillator; Si-Al₂O₃; analog circuitry; automatic gain control; floating substrate technology; loop stability; monolithic IC; oscillator start-up; radiation hardness; system-level modeling method; Analog circuits; Application specific integrated circuits; Circuit stability; Frequency measurement; Gain control; Oscillators; Paper technology; Predictive models; Silicon; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.50315

Filename

50315