Title :
Characteristics of anodic native oxide MIS diodes of In0.53Ga0.47As
Author :
Shirafuji, J. ; Amano, M. ; Inoue, M. ; Inuishi, Y.
Author_Institution :
Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
Abstract :
Anodic native oxide has been formed on In0.53Ga0.47As layers lattice-matched to InP substrate. Auger analysis of the oxide layers and capacitance/voltage characteristic measurements of MIS diodes are carried out. A U-shaped distribution of the density of surface states, the minimum of which is located at Ec-0.15 eV and is about 2.2 × 1012 cm¿2eV¿1, is observed.
Keywords :
III-V semiconductors; electronic density of states; gallium arsenide; indium compounds; interface electron states; metal-insulator-semiconductor devices; semiconductor diodes; Auger analysis; In0.53Ga0.47As; InP substrate; MIS diodes; U-shaped distribution; anodic native oxide; capacitance/voltage characteristic; density of surface states; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820445
