• DocumentCode
    979595
  • Title

    Monte-Carlo simulation of space-charge injection FET

  • Author

    Fauquembergue, R. ; Pernisek, M. ; Constant, E.

  • Author_Institution
    Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, LA au CNRS 287, Villeneuve d´´Ascq, France
  • Volume
    18
  • Issue
    15
  • fYear
    1982
  • Firstpage
    670
  • Lastpage
    671
  • Abstract
    Results of Monte-Carlo simulation of a new type of transistor, the space charge injection FET, are reported. Owing to the use of submicron undoped active regions, it seems possible to achieve low values of gate capacitance associated with high values of transconductance leading to a gain-bandwidth product close to the submillimetric wavelength range.
  • Keywords
    Monte Carlo methods; field effect transistors; semiconductor device models; simulation; space charge; Monte-Carlo simulation; gain-bandwidth product; gate capacitance; space-charge injection FET; submicron undoped active regions; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820456
  • Filename
    4246595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979595