Modeling of frequency and temperature effects in GaAs MESFETs

Author

Canfield, Philip C. ; Lam, Steven C F ; Allstot, David J.

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Volume

25

Issue

1

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

299

Lastpage

306

Abstract

The small-signal conductance and large-signal I-V characteristics of conventional 1-μm recessed-gate GaAs depletion-mode MESFET devices have been investigated. The small-signal saturation-region output conductance g_ds of a conventional GaAs MESFET is dependent on both frequency and temperature. These dependencies present serious difficulties in the design of many GaAs integrated circuits, since the small-signal voltage gain in analog circuits and the propagation delay in digital circuits depend on g_ds, and no accurate simulation model is available. A semiempirical model for the frequency-dependent parameters in GaAs depletion-mode MESFETs is presented. An analytical formulation of temperature dependence is also included by an extension of the basic Curtice model. The resulting model is significantly more accurate than other models, which have not previously incorporated frequency- and temperature-dependent effects

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 1 micron; Curtice model extension; GaAs; MESFET devices; depletion-mode; frequency-dependent parameters; integrated circuits; large-signal I-V characteristics; recessed-gate; semiempirical model; small-signal conductance; small-signal saturation-region output conductance; temperature dependence; Analog circuits; Analog integrated circuits; Digital integrated circuits; Frequency; Gallium arsenide; Integrated circuit modeling; MESFETs; Propagation delay; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.50317

Filename

50317