Title :
Modeling of frequency and temperature effects in GaAs MESFETs
Author :
Canfield, Philip C. ; Lam, Steven C F ; Allstot, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
2/1/1990 12:00:00 AM
Abstract :
The small-signal conductance and large-signal I-V characteristics of conventional 1-μm recessed-gate GaAs depletion-mode MESFET devices have been investigated. The small-signal saturation-region output conductance gds of a conventional GaAs MESFET is dependent on both frequency and temperature. These dependencies present serious difficulties in the design of many GaAs integrated circuits, since the small-signal voltage gain in analog circuits and the propagation delay in digital circuits depend on gds, and no accurate simulation model is available. A semiempirical model for the frequency-dependent parameters in GaAs depletion-mode MESFETs is presented. An analytical formulation of temperature dependence is also included by an extension of the basic Curtice model. The resulting model is significantly more accurate than other models, which have not previously incorporated frequency- and temperature-dependent effects
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 1 micron; Curtice model extension; GaAs; MESFET devices; depletion-mode; frequency-dependent parameters; integrated circuits; large-signal I-V characteristics; recessed-gate; semiempirical model; small-signal conductance; small-signal saturation-region output conductance; temperature dependence; Analog circuits; Analog integrated circuits; Digital integrated circuits; Frequency; Gallium arsenide; Integrated circuit modeling; MESFETs; Propagation delay; Temperature dependence; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
