Title :
Shunt current and excess temperature sensitivity of Ith and ¿ex in 1.3 ¿m InGaAsP DH lasers
Author :
Namizaki, H. ; Hirano, R. ; Higuchi, H. ; Oomura, E. ; Sakakibara, Y. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
Shunt current flowing through p-n-p-n current blocking layers is examined as a possible cause of excess temperature sensitivity of Ith and ¿ex which is often observed in InGaAsP BC and BH lasers. Under certain conditions, the shunt current reduces the T0 value of Ith from 65 K to 45 K and that of ¿ex from 130 K to 40 K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 microns wavelength; InGaAsP DH lasers; buried crescent laser; buried heterostructure laser; double heterostructure laser; excess temperature sensitivity; external quantum efficiency; p-n-p-n current blocking layers; semiconductor laser; shunt current; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820478
