• DocumentCode
    979780
  • Title

    Shunt current and excess temperature sensitivity of Ith and ¿ex in 1.3 ¿m InGaAsP DH lasers

  • Author

    Namizaki, H. ; Hirano, R. ; Higuchi, H. ; Oomura, E. ; Sakakibara, Y. ; Susaki, W.

  • Author_Institution
    Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
  • Volume
    18
  • Issue
    16
  • fYear
    1982
  • Firstpage
    703
  • Lastpage
    705
  • Abstract
    Shunt current flowing through p-n-p-n current blocking layers is examined as a possible cause of excess temperature sensitivity of Ith and ¿ex which is often observed in InGaAsP BC and BH lasers. Under certain conditions, the shunt current reduces the T0 value of Ith from 65 K to 45 K and that of ¿ex from 130 K to 40 K.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 microns wavelength; InGaAsP DH lasers; buried crescent laser; buried heterostructure laser; double heterostructure laser; excess temperature sensitivity; external quantum efficiency; p-n-p-n current blocking layers; semiconductor laser; shunt current; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820478
  • Filename
    4246647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979780