High-mobility Ga0.47In0.53As thin epitaxial layers grown by MBE, very closely lattice-matched to InP

Thin epitaxial layers (< 1.5 ¿m) of Ga0.47In0.53As were grown by molecular beam epitaxy, very closely lattice-matched to InP, despite a nonrotating substrate holder. Hall mobilities were measured as a function of temperature in the dark and on illumination. At low temperature, the peak mobility of undoped layers lies between 35000 and 40000 cm2V¿1s¿1 in the dark and increases up to 45000 cm2V¿1s¿1 when measured in the light. Preliminary results obtained on slightly Sn-doped layers are also reported.