High-performance CMOS/SOS circuits in SPEAR material

Author

Mayer, Donald C. ; Lee, Alfred ; Kramer, Allan R. ; Miller, Kathleen D.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

25

Issue

1

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

318

Lastpage

321

Abstract

The application of a submicrometer CMOS/SOS process technology in solid-phase epitaxy and regrowth (SPEAR) material to the fabrication of submicrometer devices and LSI circuits is described. Transistors consistently showed relatively high mobilities and relatively low leakage currents, with threshold voltages near designed values. Inverter propagation delays for an 0.6-μm ring oscillator measured 85 ps at 2 V and 41 ps at 8 V. Three high-speed LSI circuits were also designed and fabricated using a standard cell approach. Maximum clock frequencies for the 16-b universal shift register, the 8-b multiplexer/demultiplexer, and the variable modulus 10/11 prescaler, fabricated with 1-μm gate lengths, were 125, 158, and 330 MHz, respectively

Keywords

CMOS integrated circuits; digital integrated circuits; integrated logic circuits; large scale integration; multiplexing equipment; scaling circuits; shift registers; solid phase epitaxial growth; 0.6 micron; 1 micron; 125 to 330 MHz; 2 to 8 V; 41 to 85 ps; CMOS/SOS circuits; LSI circuits; SPEAR material; fabrication; high mobilities; low leakage currents; multiplexer/demultiplexer; regrowth; solid-phase epitaxy; standard cell approach; submicrometer devices; submicron process; universal shift register; variable modulus 10/11 prescaler; CMOS process; CMOS technology; Circuits; Epitaxial growth; Fabrication; Inverters; Large scale integration; Leakage current; Propagation delay; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.50322

Filename

50322