DocumentCode
980376
Title
Influence of gate intervals on the behaviour of submicron dual-gate FETs
Author
Allamando, E. ; Salmer, G. ; Bouhess, M. ; Constant, Eric
Author_Institution
Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, Laboratoire associé au CNRS 287, Villeneuve d´Ascq, France
Volume
18
Issue
18
fYear
1982
Firstpage
791
Lastpage
793
Abstract
A simple, self-consistent model, taking into account the non-stationary electron dynamic effects, is used to study the behaviour of submicron dual-gate FETs. It shows that the conventional model, based on the connection of two field-effect transistors in cascade, is no longer valid when the intergate distances become smaller than 0.6 ¿m.
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device models; GaAs; III-V semiconductor; gate intervals; nonstationary electron dynamic effects; self-consistent model; submicron dual-gate FETs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820536
Filename
4246797
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