DocumentCode
980419
Title
4 Gbit/s direct modulation of 1.3 ¿m InGaAsP/InP semiconductor lasers
Author
Hagimoto, Ken ; Ohta, N. ; Nakagawa, Koichi
Author_Institution
NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
Volume
18
Issue
18
fYear
1982
Firstpage
796
Lastpage
798
Abstract
It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are also studied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; multiplexing equipment; optical communication equipment; optical modulation; semiconductor junction lasers; 4 Gbit/s direct modulation; III-V semiconductors; InGaAsP/InP semiconductor lasers; eye degradation; multiplexer; pseudorandom pulse pattern; relaxation oscillation; tailing effect; time delay;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820539
Filename
4246821
Link To Document