Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters

Author

Wang, Tahui ; Wu, Sheng-Jyh ; Huang, Chimoon

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

12

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

1758

Lastpage

1761

Abstract

An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCPL AlGaAs-GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much improved in the SCFL inverter due to its particular operational principle

Keywords

III-V semiconductors; aluminium compounds; circuit analysis computing; digital simulation; direct coupled FET logic; electron traps; field effect integrated circuits; gallium arsenide; high electron mobility transistors; hysteresis; integrated logic circuits; logic gates; semiconductor device models; transfer functions; transient response; AlGaAs-GaAs; DCFL; HEMT inverters; SCFL; anomalous DX trap effects; device/circuit simulation integration; hysteretic characteristics; input-output voltage transfer function; integrated device/circuit analysis; slow transient effect; source-coupled FET logic; transient phenomena; Circuit simulation; Electron traps; Equations; FETs; Gallium arsenide; HEMTs; Hysteresis; Logic devices; Pulse width modulation inverters; Threshold voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.248087

Filename

248087