DocumentCode
980611
Title
7 Gbit/s coherent pulse generation in an actively mode-locked GaAlAs diode laser
Author
Suzuki, Yuya ; Sato, Takao
Author_Institution
MITI, Laser Section, Radio & Opto-electronics Division, Electrotechnical Laboratory, Tsukuba, Japan
Volume
18
Issue
19
fYear
1982
Firstpage
821
Lastpage
823
Abstract
High-rate coherent pulse generation was demonstrated with a GaAlAs laser system by active mode-locking. Almost transform-limited pulses of about 30 ps duration are obtained at a rate of about 7 GHz.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; 7 Gbit/s coherent pulse generation; III-V semiconductor; actively mode-loaded GaAlAs diode laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820558
Filename
4246883
Link To Document