Title :
Transferred-electron oscillations in In0.53Ga0.47As
Author :
Zhao, Y.Y. ; Wei, C.J. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Transferred-electron oscillations were observed and investigated in planar devices of In0.53Ga0.47As. The peak-to-peak magnitude of oscillations with respect to the device current at threshold field was as high as 70%, indicating the peak-to-valley velocity ratio of 3.3:1 for this material. The domain velocity was estimated from the oscillation frequency (2 GHz) and the corresponding device length (40 ¿m) to be 8Ã106 cms¿1. The results presented in the letter show a promising prospect for TED applications of this ternary alloy.
Keywords :
Gunn devices; III-V semiconductors; gallium arsenide; indium compounds; 2 GHz; III-V semiconductor; In0.53Ga0.47As; domain velocity; peak-to-valley velocity ratio; transferred electron oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820567