Title :
Transferred-electron oscillations in In0.53Ga0.47As
Author :
Zhao, Y.Y. ; Wei, C.J. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Transferred-electron oscillations were observed and investigated in planar devices of In0.53Ga0.47As. The peak-to-peak magnitude of oscillations with respect to the device current at threshold field was as high as 70%, indicating the peak-to-valley velocity ratio of 3.3:1 for this material. The domain velocity was estimated from the oscillation frequency (2 GHz) and the corresponding device length (40 ¿m) to be 8×106 cms¿1. The results presented in the letter show a promising prospect for TED applications of this ternary alloy.
Keywords :
Gunn devices; III-V semiconductors; gallium arsenide; indium compounds; 2 GHz; III-V semiconductor; In0.53Ga0.47As; domain velocity; peak-to-valley velocity ratio; transferred electron oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820567
