DocumentCode
980854
Title
Real-time carbon content control for PECVD ZrO2 thin-film growth
Author
Ni, Dong ; Lou, Yiming ; Christofides, Panagiotis D. ; Sha, Lin ; Lao, Sandy ; Chang, Jane P.
Author_Institution
Process Control Group, Univ. of California, Los Angeles, CA, USA
Volume
17
Issue
2
fYear
2004
fDate
5/1/2004 12:00:00 AM
Firstpage
221
Lastpage
230
Abstract
We present a methodology for real-time control of thin-film carbon content in a plasma-enhanced metal-organic chemical vapor deposition process using combination of online gas phase measurements obtained through optical emission spectroscopy and off-line (ex situ) measurements of film composition obtained via X-ray photoelectron spectroscopy (XPS). Initially, an estimation model of carbon content of ZrO2 thin films based on real-time optical emission spectroscopy data is presented. Then, a feedback control scheme, which employs the proposed estimation model and a proportional-integral controller, is developed to achieve carbon content control. Using this approach, a real-time control system is developed and implemented on an experimental electron cyclotron resonance high-density plasma-enhanced chemical vapor deposition system to demonstrate the effectiveness of real-time feedback control of carbon content. Experimental results of depositions and XPS analysis of deposited thin films under both open-loop and closed-loop operations are shown and compared. The advantages of operating the process under real-time feedback control in terms of robust operation and lower carbon content are demonstrated.
Keywords
X-ray photoelectron spectra; carbon; closed loop systems; cyclotron resonance; luminescence; plasma CVD; thin films; zirconium compounds; C; PECVD; X-ray photoelectron spectroscopy; XPS; ZrO2; ZrO2 thin-film growth; closed-loop operations; electron cyclotron resonance; feedback control; high-density plasma-enhanced chemical vapor deposition; open-loop operations; optical emission spectroscopy; proportional-integral controller; real-time carbon content control; robust operation; thin-film carbon content; Carbon dioxide; Chemical vapor deposition; Feedback control; Optical films; Phase measurement; Plasma chemistry; Plasma measurements; Spectroscopy; Sputtering; Stimulated emission; Carbon content; OES; PECVD; XPS; ZrO$_2$ ; real-time feedback control; thin-film growth;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2004.826939
Filename
1296726
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