Title :
GaSb Photodiode for detection of 1.73 ¿m radiation of Er:YLF laser
Author :
Heinz, C. ; Schmidt auf Altenstadt, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Technische Elektronik, Mÿnchen, West Germany
Abstract :
We have developed a GaSb photodiode for receiving the 1.73 ¿m radiation of a solid-state laser (Er:YLF). The diode layers have been grown by LPE on (100)-oriented Te-doped GaSb substrates. The peak value of the responsivity of the diodes is 0.55 A/W at a wavelength of 1.73 ¿m corresponding to a quantum efficiency of 40%. The best RA product of the diodes is 83 ¿cm2. The data are obtained without anti-reflection coating.
Keywords :
III-V semiconductors; gallium compounds; infrared detectors; liquid phase epitaxial growth; photodiodes; solid lasers; Er:LiYF4 laser; Er:YLF laser; GaSb photodiode; IR photodiodes; LPE; RA product; Te:GaSb substrate; detection wavelength 1.73 micron; near IR region; quantum efficiency; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820583
