• DocumentCode
    980887
  • Title

    High-quality InP surface corrugations for 1.55 ¿m InGaAsP DFB lasers fabricated using electron-beam lithography

  • Author

    Westbrook, L.D. ; Nelson, A.W. ; Dix, C.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    18
  • Issue
    20
  • fYear
    1982
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    Second-order surface corrugations for 1.55 ¿m distributed feedback (DFB) lasers have been fabricated in InP with a high yield using electron beam exposed resist masks. Attractive features of this technique are its flexibility and variable mark/space ratio (for optimum DFB coupling strength). Diffraction experiments show these gratings to be of suitably high optical quality.
  • Keywords
    III-V semiconductors; diffraction gratings; electron beam lithography; gallium arsenide; laser accessories; semiconductor junction lasers; 1.55 micron laser; InGaAsP DFB lasers; InP surface corrugations; diffraction gratings; electron-beam lithography; fabrication; optical fibre communication lasers; second order surface corrugations; semiconductor junction lasers; variable mark/space ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820586
  • Filename
    4246921