Title :
Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE
Author :
Hersee, S.D. ; Baldy, M. ; Assenat, P. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
In a recent publication we gave preliminary results on the lasing characteristics of a GRIN-SCH GaAs/GaAlAs laser grown by OM-VPE. The parameters of this single quantum well laser have now been further optimised, and for a quantum well thickness of 60 Å, with outer confinement layers composed of Ga0.4Al0.6As, significantly lower threshold current densities have been achieved. For a broad-area laser of cavity length 413 ¿m (width 140 ¿m) the average threshold current density is 232 A cm¿2, and this decreases to 121 A cm¿2 for a chip length of 1788 ¿m. We believe that these are the lowest lasing threshold current densities that have yet been reported.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; OM-VPE; broad-area laser; cavity length; graded refractive-index; low threshold GRIN-SCH GaAs/GaAlAs laser structure; quantum well thickness 60 Angstrom; separate confinement heterostructure; single quantum well lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820590
