• DocumentCode
    980927
  • Title

    Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE

  • Author

    Hersee, S.D. ; Baldy, M. ; Assenat, P. ; de Cremoux, B. ; Duchemin, J.P.

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
  • Volume
    18
  • Issue
    20
  • fYear
    1982
  • Firstpage
    870
  • Lastpage
    871
  • Abstract
    In a recent publication we gave preliminary results on the lasing characteristics of a GRIN-SCH GaAs/GaAlAs laser grown by OM-VPE. The parameters of this single quantum well laser have now been further optimised, and for a quantum well thickness of 60 Å, with outer confinement layers composed of Ga0.4Al0.6As, significantly lower threshold current densities have been achieved. For a broad-area laser of cavity length 413 ¿m (width 140 ¿m) the average threshold current density is 232 A cm¿2, and this decreases to 121 A cm¿2 for a chip length of 1788 ¿m. We believe that these are the lowest lasing threshold current densities that have yet been reported.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; OM-VPE; broad-area laser; cavity length; graded refractive-index; low threshold GRIN-SCH GaAs/GaAlAs laser structure; quantum well thickness 60 Angstrom; separate confinement heterostructure; single quantum well lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820590
  • Filename
    4246925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980927